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Abstract Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt₃Sn and Pt₃Sn_xFe_1-xthin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt₃Sn and Pt₃Sn_xFe_1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt₃Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt₃Sn and Pt₃Sn_xFe_1-xshow the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices. 

We demonstrate the impact of subtle changes in molecular structure on the singlet and triplet exciton diffusion lengths ( L D ) for derivatives of the archetypical electron-transport material 4,7-diphenyl-1,10-phenanthroline (BPhen). Specifically, this work offers a systematic characterization of singlet and triplet exciton transport in identically prepared thin films, highlighting the differing dependence on molecular photophysics and intermolecular spacing. For luminescent singlet excitons, photoluminescence quenching measurements yield an L D from <1 nm for BPhen, increasing to (5.4 ± 1.2) nm for 2,9-dichloro-4,7-diphenyl-1,10-phenanthroline (BPhen-Cl 2 ) and (3.9 ± 1.1) nm for 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The diffusion of dark triplet excitons is probed using a phosphorescent sensitizer-based method where triplets are selectively injected into the material of interest, with those migrating through the material detected via energy transfer to an adjacent, phosphorescent sensitizer. Interestingly, the triplet exciton L D decreases from (15.4 ± 0.4) nm for BPhen to (8.0 ± 0.7) nm for BPhen-Cl 2 and (4.0 ± 0.5) nm for BCP. The stark difference in behavior observed for singlets and triplets with functionalization is explicitly understood using long-range Förster and short-range Dexter energy transfer mechanisms, respectively. 

Abstract Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr_1-xCa_xCoO₃). Here, we show that in thin films of the complex perovskite (Pr_1-yY_y)_1-xCa_xCoO_3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.